STGP19NC60KD - 20 A - 600 V - short circuit rugged IGBT
STMicroelectronics
Download the STGP19NC60KD datasheet PDF.
This datasheet also covers the STGB19NC60KD variant, as both devices belong to the same 20 a - 600 v - short circuit rugged igbt family and are provided as variant models within a single manufacturer datasheet.
General Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Figure 1.
Table 1.
Key Features
Low on-voltage drop (VCE(sat)).
Low Cres / Cies ratio (no cross conduction
susceptibility).
Short circuit withstand time 10 µs.
IGBT co-packaged with Ultrafast free-wheeling
diode.
Note: The manufacturer provides a single datasheet file (STGB19NC60KD_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for STGP19NC60KD (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STGP19NC60KD. For precise diagrams, and layout, please refer to the original PDF.
STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susc...
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tage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ High frequency inverters ■ Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet − production data 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1.
STGP19NC60KD Datasheet
