STMicroelectronics STGP30H60DF
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of high frequency converters.| Part No. | STGP30H60DF |
|---|---|
| Datasheet | STGP30H60DF Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 30A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● High speed switching● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
● Short circuit rated
● Ultrafast soft recovery antiparallel diode
APPLICATIONS
● Inverter● UPS
● PFC
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGP30H60DF Product summary Order code STGP30H60DF Marking GP30H60DF Package TO-220 Packing Tube DS8709 - Rev 4 - September 2020 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current VGE Gate-emitter voltage Continuous forward current at TC = 25 °C IF Continuous forward current at TC = 100 °C IFP(1) Pulsed forward current PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
