STMicroelectronics STGP30H65DFB2
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.| Part No. | STGP30H65DFB2 |
|---|---|
| Datasheet | STGP30H65DFB2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 30A high-speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature : TJ = 175 °C● Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
● Very fast and soft recovery co-packaged diode
● Minimized tail current
● Tight parameter distribution
● Low thermal resistance
● Positive VCE(sat) temperature coefficient
APPLICATIONS
● Welding● Power factor correction
● UPS
● Solar inverters
● Chargers NG1E3C2T
DESCRIPTION
A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGP30H65DFB2 Product summary Order code STGP30H65DFB2 Marking G30H65DFB2 Package TO-220 Packing Tube DS13255 - Rev 1 - February 2020 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(...
