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STGP30M65DF2 - Trench gate field-stop IGBT

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STMicroelectronics

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STGP30M65DF2 Trench gate field-stop IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGP30M65DF2

Datasheet Details

Part number	STGP30M65DF2
Manufacturer	STMicroelectronics
File Size	524.32 KB
Description	Trench gate field-stop IGBT
Datasheet	STGP30M65DF2 Datasheet
Additional preview pages of the STGP30M65DF2 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
Tight parameters distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

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Published: Jul 29, 2015 |