STGP30M65DF2 Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Part: STGP30M65DF2
- Description: Trench gate field-stop IGBT
- Manufacturer: STMicroelectronics
- Size: 524.32 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STGP30H60DF | 30A high speed trench gate field-stop IGBT |
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| STGP30NC60W | ultra fast IGBT |