STMicroelectronics STGP30V60F
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.| Part No. | STGP30V60F |
|---|---|
| Datasheet | STGP30V60F Download |
| Manufacturer |  STMicroelectronics |
| Description | Trench gate field-stop IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● Tail-less switching off
● VCE(sat) = 1.85 V (typ.) @ IC = 30 A
● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● Very high frequency converters G (1) E (3)
DESCRIPTION
Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order codes STGB30V60F STGP30V60F Table 1. Device summary Marking Package GB30V60F GP30V60F D2PAK TO-220 Packaging Tape and reel Tube April 2014 This is information on a product in full production. DocID025049 Rev 4 1/19 19 Contents Contents STGB30V60F, STGP30V60F 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ...........................
