DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. <1kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s MOTOR CONTROL s LIGHT DIMMER s STATIC RELAYS ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter STGP3NB60S Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature 65 0.32 –65 to 150 150 600 20 ±20 6 3 24 45 Value STGD3NB60S V V V A A A W W/°C °C °C Unit (q ) Pulse width limited by safe operating area August 2002 1/10 STGP3NB60S - STGD3NB60S THERMAL DATA TO-220 Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Ther...
STMicroelectronics
