STMicroelectronics STGP7NB60HD
The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. <120kHz).APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V GE IC IC I CM (● ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 oC Collector Current (continuous) at Tc = 100 oC Collector Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Storage T emperature Max. O perating Junct ion T emperature 600 ± 20 14 7 56 80 0.64 -65 to 150 150 Value STGP7NB60HD ST GP7NB60HDFP 600 ± 20 13 6 56 35 0.28 V V A A A W W /o C o o Unit C C (●) Pulse width limited by safe operating area June 1999 1/9 STGP7NB60HD/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Thermal Resistance Junction...