STMicroelectronics STGSH50M120D
This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is optimized both in conduction and switching losses for hard switching commutation, where short-circuit ruggedness is an essential feature.| Part No. | STGSH50M120D |
|---|---|
| Datasheet | STGSH50M120D Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 50A IGBT |
| Buy | Stock & Price |
FEATURES
● Low-loss and short-circuit rugged IGBTs● Maximum junction temperature: TJ = 175 °C
● VCE(sat) = 1.8 V (typ.) @ IC = 50 A
● Minimized tail current
● Tight parameter distribution
● Low thermal resistance
● Positive VCE(sat) temperature coefficient
● Soft and fast-recovery antiparallel diode
● Isolation rating of 3.4 kVrms/min
APPLICATIONS
● Motor drives● Industrial motor control
DESCRIPTION
A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency and power density in industrial drives. Product status link STGSH50M120D Product summary Order code STGSH50M120D Marking GSH50M120D Package ACEPACK SMIT Packing Tape and reel DS14773 - Rev 2 - November 2024 For further information contact your local STMicroelectronics sales office. STGSH50M120D Internal schematic and pin description 1 Internal schematic and pin description Figure 1. Electrical topology and pin positioning 9 (DC+) T1 1 (G1) 2 (K1) T2 6 (G2) 5 (K2) D1 7 (U) D2 8 (DC-) 1 G1 2 K1 3 NC 4 NC 5 K2 6 G2 Table 1.
