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STGW100N30 - Fast IGBT

Download the STGW100N30 datasheet PDF. This datasheet also covers the STGF100N30 variant, as both devices belong to the same fast igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced high-density and high-current IGBT technology with low-drop companion diode adapted to various functions in PDP sets.

Figure 1.

Table 1.

Key Features

  • Optimized for sustain and energy recovery circuits in PDP.

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Note: The manufacturer provides a single datasheet file (STGF100N30_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features ■ ■ ■ ■ ■ Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency High repetitive peak current capability 3 1 2 3 1 2 2 1 3 TO-220FP TO-247 Description Advanced high-density and high-current IGBT technology with low-drop companion diode adapted to various functions in PDP sets. TO-220 Figure 1. Internal schematic diagram Table 1.