Datasheet4U Logo Datasheet4U.com

STGW19NC60HD - very fast IGBT

Download the STGW19NC60HD datasheet PDF. This datasheet also covers the STGB19NC60HD variant, as both devices belong to the same very fast igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Figure 1.

Table 1.

Key Features

  • Low www. DataSheet4U. com.
  • Low.
  • on-voltage drop (VCE(sat)) 3 1 1 3 2 CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery anti-parallel diode D²PAK TO-220.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGB19NC60HD_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STGW12NB60H N-CHANNEL IGBT ST Microelectronics
STGW12NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60H N-CHANNEL IGBT ST Microelectronics
STGW20NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60K N-CHANNEL IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGW19NC60H 19 A - 600 V - very fast IGBT
STGW19NC60W 19 A - 600 V - ultra fast IGBT
STGW19NC60WD N-channel IGBT
STGW100H65FB2-4 IGBT
STGW100N30 Fast IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGB19NC60HD - STGF19NC60HD STGP19NC60HD - STGW19NC60HD 19 A - 600 V - very fast IGBT Features ■ Low www.DataSheet4U.com ■ Low ■ on-voltage drop (VCE(sat)) 3 1 1 3 2 CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery anti-parallel diode D²PAK TO-220 Applications ■ ■ ■ High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drives 2 1 3 1 2 3 TO-247 TO-220FP Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1.