STMicroelectronics STGW30NC60VD
This device uses the advanced PowerMESH process resulting in an excellent tradeoff between switching performance and low on-state behavior.STGW30NC60VD Specifications
- Package : TO-247-3
- Mount Type : Through Hole
- Max Collector Current : 80A
- Forward Current : 30A
- Terminals : 3
- Collector Emitter Voltage : 600V
- Collector Emitter Saturation Voltage : 1.8V
- Reverse Recovery Time : 44ns
- Rise Time : 11ns
- Max Power Dissipation : 250W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STGW30NC60VD |
|---|---|
| Datasheet | STGW30NC60VD Download |
| Manufacturer |  STMicroelectronics |
| Description | fast IGBT |
| Buy | Stock & Price |
FEATURES
● High current capability● High frequency operation up to 50 kHz
● Very soft ultra fast recovery antiparallel diode
APPLICATIONS
● High frequency inverters, UPS● Motor drive
● SMPS and PFC in both hard switch and resonant topologies
DESCRIPTION
SC12850_DIODE_IGBT Product status link STGW30NC60VD Product summary Order code STGW30NC60VD Marking GW30NC60VD Package TO-247 long leads Packing Tube DS5126 - Rev 6 - May 2022 For further information contact your local STMicroelectronics sales office. STGW30NC60VD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value VCES Collector-emitter voltage (VGE = 0 V) 600 Continuous collector current at TC = 25 °C 80 IC(1) Continuous collector current at TC = 100 °C 40 ICL(2) Turn-off latching current 100 ICP(3) Pulsed collector current 150 VGE Gate-emitter voltage ±20 IF Diode RMS forward current at TC = 25 °C 30 IFSM Surge not repetitive forward current, tP = 10 ms sinusoidal 120 PTOT Total power dissipation at TC = 25 °C 250 TJ TSTG Operating junction temperature range Storage temperature range -55 to 150 1.
