STMicroelectronics STGW35HF60WDI
The "HF" series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature. The suffix "W" denotes a subset of products tailored to high switching frequency operation (over 100 kHz).| Part No. | STGW35HF60WDI |
|---|---|
| Datasheet | STGW35HF60WDI Download |
| Manufacturer |  STMicroelectronics |
| Description | ultrafast IGBT |
| Buy | Stock & Price |
FEATURES
●●
● Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Low VF soft recovery antiparallel diode 3
APPLICATIONS
2●
●
● Welding Induction heating Resonant converters TO-247 1
DESCRIPTION
Figure 1. Internal schematic diagram Table 1. Device summary Marking GW35HF60WDI 35HF60WDI Package TO-247 Tube TO-247 long leads Packaging Order code STGW35HF60WDI STGWA35HF60WDI September 2009 Doc ID 16090 Rev 2 1/10 10 Electrical ratings STGW35HF60WDI 1 Electrical ratings Table 2. Symbol VCES IC (1) Absolute maximum ratings Value Parameter TO-247 Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Continuous collector current at TC = 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp= 10 ms sinusoidal Total dissipation at TC = 25 °C Storage temperature – 55 to 150 Operating junction temperature °C 200 60 35 80 150 ± 20 30 130 260 TO-247 long leads 600 70 40 V A A A A V A A W Unit IC (1) ICL ICP (2) (3) VGE IF IFSM PTOT Tstg Tj 1.
