STMicroelectronics STGW35NB60SD
N-CHANNEL IGBT
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. Internal schematic diagramAPPLICATIONS
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● LIGHT DIMMER HID WELDING MOTOR CONTROL STATIC RELAYS Order codes Sales Type STGW35NB60SD Marking GW35NB60SD Package TO-247 Packaging TUBE November 2005 Rev 1 1/13 13 1 Electrical ratings STGW35NB60SD 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Collector-Emitter Voltage (VGS = 0) Collector Current (continuous) at 25°C Collector Current (continuous) at 100°C Collector Current (pulsed) Gate-Emitter Voltage Diode RMS Forward Current at TC = 25°C Total Dissipation at TC = 25°C Operating Junction Temperature – 55 to 150 Tstg TL Storage Temperature Maximum Lead Temperature for Soldering Purpose (1.6mm from case, for 10sec.) 300 °C °C Value 600 70 35 250 ± 20 30 200 Unit V A A A V A W Symbol VCES IC Note 4 IC Note 4 ICM Note 1 VGE If PTOT Tj Table 2.