STMicroelectronics STGW40H120DF2
The device is part of the H series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.FEATURES
● Maximum junction temperature: TJ = 175 °C● High speed switching series
● Minimized tail current
● VCE(sat) = 2.1 V (typ.) @ IC = 40 A
● 5 μs minimum short circuit withstand time at TJ = 150 °C
● Safe paralleling
● Low thermal resistance
● Very fast recovery antiparallel diode
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● High frequency converters
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product summary Order code STGW40H120DF2 Marking G40H120DF2 Package TO-247 Packing Tube Order code STGWA40H120DF2 Marking G40H120DF2 Package TO-247 long leads Packing Tube DS9298 - Rev 6 - February 2025 For further information, contact your local STMicroelectronics sales office. STGW40H120DF2, STGWA40H120DF2 Electrical ratings 1 Electrical ratings Table 1.