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STGW40H65FB - IGBT

Download the STGW40H65FB datasheet PDF (STGFW40H65FB included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for igbt.

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A.
  • Safe paralleling.
  • Tight parameter distribution.
  • Low thermal resistance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGFW40H65FB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT TO-3PF 3 2 1 3 12 TO-247 3 12 TO-247 long leads C(2, TAB) G(1) E(3) G1C2TE3 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A • Safe paralleling • Tight parameter distribution • Low thermal resistance Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
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