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STGW40H65FB Datasheet IGBT

Manufacturer: STMicroelectronics

Download the STGW40H65FB datasheet PDF. This datasheet also includes the STGFW40H65FB variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STGFW40H65FB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Overview

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT TO-3PF 3 2 1 3 12 TO-247 3 12 TO-247 long leads C(2, TAB) G(1) E(3).

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A.
  • Safe paralleling.
  • Tight parameter distribution.
  • Low thermal resistance.

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