STMicroelectronics STGW40NC60KD
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.FEATURES
● Low on-voltage drop (VCE(sat))● Low Cres / Cies ratio (no cross conduction susceptibility)
● Short-circuit withstand time 10 µs 2 1 3
● IGBT co-packaged with ultra fast free-wheeling diode TO-247
APPLICATIONS
● High frequency inverters● Motor drivers Figure 1. Internal schematic diagram
DESCRIPTION
Table 1. Device summary Order code STGW40NC60KD Marking GW40NC60KD Package TO-247 Packaging Tube March 2014 This is information on a product in full production. DocID14807 Rev 2 1/13 13 Contents STGW40NC60KD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .