STGW45NC60VD Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Internal schematic diagram Table 1. Device summary Order code Marking GW45NC60VD Package TO-247 long leads Packaging Tube STGW45NC60VD March 2008 Rev 1 1/15 .st.
STGW45NC60VD Key Features
- Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode