STMicroelectronics STGW50NB60H
The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. <120kHz).APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS s WELDING EQUIPMENTS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES TO-247 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V ECR V GE IC IC ICM (● ) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 o C Collector Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 600 20 ± 20 100 50 400 250 2 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (●) Pulse width limited by safe operating area June 1999 1/5 STGW50NB60H THERMAL DATA R thj-case R thj-amb R thc-h Thermal Resistance Junction-ca...