STMicroelectronics STGW75H65DFB2-4
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.| Part No. | STGW75H65DFB2-4 |
|---|---|
| Datasheet | STGW75H65DFB2-4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 75A high-speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
● Very fast and soft recovery co-packaged diode
● Minimized tail current
● Tight parameter distribution
● Low thermal resistance
● Positive VCE(sat) temperature coefficient
● Excellent switching performance thanks to the extra driving kelvin pin
APPLICATIONS
G(4)● Welding K(3)
● Power factor correction
● UPS E(2)
● Solar inverters NG4K3E2C1_TAB
● Chargers
DESCRIPTION
A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGW75H65DFB2-4 Product summary Order code STGW75H65DFB2-4 Marking G75H65DFB2 Package TO247-4 Packing Tube DS13421 - Rev 1 - August 2020 For further information contact your local STMicroelectronics sales office. STGW75H65DFB2-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Col...
