STMicroelectronics STGW8M120DF3
The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the lowloss and the short-circuit functionality are essential.| Part No. | STGW8M120DF3 |
|---|---|
| Datasheet | STGW8M120DF3 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 8A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● 10 μs of minimum short-circuit withstand time
● VCE(sat) = 1.85 V (typ.) @ IC = 8 A
● Tight parameter distribution
● Safer paralleling
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Soft and very fast-recovery antiparallel diode
APPLICATIONS
● Industrial drives● Uninterruptable power supplies (UPS)
● Solar inverters
● Welding
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product summary Order code STGW8M120DF3 Marking G8M120DF3 Package TO-247 Packing Tube Order code STGWA8M120DF3 Marking G8M120DF3 Package TO-247 long leads Packing Tube DS11648 - Rev 4 - February 2025 For further information, contact your local STMicroelectronics sales office. STGW8M120DF3, STGWA8M120DF3 Electrical ratings 1 Electrical ratings Table 1.
