STMicroelectronics STGWA25M120DF3
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.| Part No. | STGWA25M120DF3 |
|---|---|
| Datasheet | STGWA25M120DF3 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 25A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● 10 μs of short-circuit withstand time
● Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
● Tight parameter distribution
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Soft- and fast-recovery antiparallel diode
APPLICATIONS
● Industrial drives● Uninterruptable power supplies (UPS)
● Solar inverters
● Welding
DESCRIPTION
Product status link STGWA25M120DF3 Product summary Order code STGWA25M120DF3 Marking G25M120DF3 Package TO-247 long leads Packing Tube DS12637 - Rev 3 - August 2025 For further information, contact your local STMicroelectronics sales office. STGWA25M120DF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current Gate-emitter voltage VGE Transient gate-emitter voltage Continuous forward current at TC = 25...
