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STGWA30H60DFB - 30A high speed HB series IGBT

Download the STGWA30H60DFB datasheet PDF. This datasheet also covers the STGW30H60DFB variant, as both devices belong to the same 30a high speed hb series igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Low saturation voltage: VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW30H60DFB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STGWA30H60DFB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STGWA30H60DFB. For precise diagrams, and layout, please refer to the original PDF.

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long leads 3 2 1 TO-3P Fea...

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B series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long leads 3 2 1 TO-3P Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

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