STMicroelectronics STGWA30IH65DF
The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. The result is a product specifically designed to maximize efficiency for any resonant and softswitching applications.| Part No. | STGWA30IH65DF |
|---|---|
| Datasheet | STGWA30IH65DF Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 30A soft-switching IGBT |
| Buy | Stock & Price |
FEATURES
● Designed for soft commutation only● Maximum junction temperature: TJ = 175 °C
● VCE(sat) = 1.55 V (typ.) @ IC = 30 A
● Minimized tail current
● Tight parameter distribution
● Low thermal resistance
● Low drop voltage freewheeling co-packaged diode
● Positive VCE(sat) temperature coefficient
APPLICATIONS
● Induction cooking● Resonant converter
● Microwave ovens
DESCRIPTION
A freewheeling diode with a low drop forward voltage is included. Product summary Order code STGWA30IH65DF Marking G30IH65DF Package TO-247 long leads Packing Tube DS13283 - Rev 2 - October 2024 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current Gate-emitter voltage VGE Transient gate-emitter voltage (tp ≤ 10 μs) Continuous forward current at TC =...
