STMicroelectronics STGWA30M65DF2AG
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.| Part No. | STGWA30M65DF2AG |
|---|---|
| Datasheet | STGWA30M65DF2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade 650V 30A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
TO-247 long leads C(2, TAB)● AEC-Q101 qualified
● Maximum junction temperature: TJ = 175 °C
● 6 μs of minimum short circuit withstand time
● Low VCE(sat) = 1.7 V (typ.) @ IC = 30 A
● Tight parameter distribution
● Low thermal resistance
● Soft and very fast-recovery antiparallel diode
APPLICATIONS
G(1)● Motor control
● Auxiliary loads
● Thermal management
● General purpose inverter E(3) G1C2TE3_diode
DESCRIPTION
Product status link STGWA30M65DF2AG Product summary Order code STGWA30M65DF2AG Marking G30M65DF2AG Package TO-247 long leads Packing Tube DS11659 - Rev 3 - July 2024 For further information contact your local STMicroelectronics sales office. STGWA30M65DF2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) Gate-emitter voltage VGE Transient...
