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STGWT15H60F Datasheet Trench Gate Field-stop IGBT

Manufacturer: STMicroelectronics

Overview: STGWT15H60F Trench gate field-stop IGBT, H series 600 V, 15 A high speed Datasheet - production data TAB TO-3P 3 2 1 Figure 1: Internal schematic.

General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the H series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • High speed switching.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Short-circuit rated.

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