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STGWT15H60F - Trench gate field-stop IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Key Features

  • High speed switching.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Short-circuit rated.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGWT15H60F Trench gate field-stop IGBT, H series 600 V, 15 A high speed Datasheet - production data TAB TO-3P 3 2 1 Figure 1: Internal schematic diagram Features  High speed switching  Tight parameter distribution  Safe paralleling  Low thermal resistance  Short-circuit rated Applications  Motor control  UPS  PFC C(2, TAB) G(1) E(3) Order code STGWT15H60F Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.