Datasheet4U Logo Datasheet4U.com

STGWT30H60DFB - 30A high speed HB series IGBT

Download the STGWT30H60DFB datasheet PDF. This datasheet also covers the STGW30H60DFB variant, as both devices belong to the same 30a high speed hb series igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Low saturation voltage: VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW30H60DFB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STGW12NB60H N-CHANNEL IGBT ST Microelectronics
STGW12NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60H N-CHANNEL IGBT ST Microelectronics
STGW20NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60K N-CHANNEL IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGWT30V60DF Trench gate field-stop IGBT
STGWT38IH130D very fast IGBT
STGWT15H60F Trench gate field-stop IGBT
STGWT20H60DF 600V 20A high speed trench gate field-stop IGBT
STGWT20H65FB IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long leads 3 2 1 TO-3P Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.