Datasheet Summary
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB
Trench gate field-stop 600 V, 30 A high speed HB series IGBT
3 2 1
TO-247
3 2 1
TO-247 long leads
3 2 1
TO-3P
Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High frequency converters
Description
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are...