STGWT30V60DF Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Part: STGWT30V60DF
- Manufacturer: STMicroelectronics (official site)
- Size: 1.09 MB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STGWT30H60DFB | 30A high speed HB series IGBT |
| STGWT38IH130D | very fast IGBT |
| STGWT15H60F | Trench gate field-stop IGBT |
| STGWT20H60DF | 600V 20A high speed trench gate field-stop IGBT |
| STGWT20H65FB | IGBT |
STGWT30V60DF Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum promise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.