STGWT30V60DF Overview
Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low - Very fast soft recovery antiparallel diode
| Part | STGWT30V60DF |
|---|---|
| Description | Trench gate field-stop IGBT |
| Manufacturer | STMicroelectronics |
| Size | 1.09 MB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| SLIMDIP-L | Mitsubishi Electric | DIPIPM RC-IGBT inverter bridge |
| SLIMDIP-S | Mitsubishi Electric | DIPIPM RC-IGBT inverter bridge |
| SP25N135T | Xiner | Trench-FS IGBT |