Datasheet4U Logo Datasheet4U.com

STH130N8F7-2 - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STH130N8F7-2 VDS 80 V R DS(on)max. 5.0 mΩ ID 110 A P TOT 205 W.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STH130N8F7-2 N-Channel MOSFET INCHANGE
STH13NB60 N-CHANNEL Power MOS MOSFET ST Microelectronics
STH1061 NPN Plastic Power Transistor SEMTECH ELECTRONICS
STH10NA50 N-CHANNEL Power MOS MOSFET ST Microelectronics
STH10NA50FI N-CHANNEL Power MOS MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STH130N10F3 N-channel Power MOSFET
STH130N10F3-2 N-channel Power MOSFET
STH13009 High voltage fast-switching NPN power transistor
STH13N120K5-2AG Automotive-grade N-channel Power MOSFET
STH13NB60FI N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STH130N8F7-2 N-channel 80 V, 4.2 mΩ typ., 110 A STripFET™ F7 Power MOSFET in an H²PAK-2 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STH130N8F7-2 VDS 80 V R DS(on)max. 5.0 mΩ ID 110 A P TOT 205 W  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Published: |