Datasheet4U Logo Datasheet4U.com

STH130N8F7-2 - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STH130N8F7-2 VDS 80 V R DS(on)max. 5.0 mΩ ID 110 A P TOT 205 W.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STH130N8F7-2 N-Channel MOSFET INCHANGE
STH13NB60 N-CHANNEL Power MOS MOSFET ST Microelectronics
STH1061 NPN Plastic Power Transistor SEMTECH ELECTRONICS
STH10NA50 N-CHANNEL Power MOS MOSFET ST Microelectronics
STH10NA50FI N-CHANNEL Power MOS MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STH130N10F3 N-channel Power MOSFET
STH130N10F3-2 N-channel Power MOSFET
STH13009 High voltage fast-switching NPN power transistor
STH13N120K5-2AG Automotive-grade N-channel Power MOSFET
STH13NB60FI N-CHANNEL MOSFET

Full PDF Text Transcription

Click to expand full text
STH130N8F7-2 N-channel 80 V, 4.2 mΩ typ., 110 A STripFET™ F7 Power MOSFET in an H²PAK-2 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STH130N8F7-2 VDS 80 V R DS(on)max. 5.0 mΩ ID 110 A P TOT 205 W  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Published: |