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BV32
NPN Silicon Epitaxial Planar Transistor
High voltage fast switching power transistor
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current Total Dissipation Operating Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg
TO-92 Plastic Package Weight approx. 0.19g
Value 700 400 9 1.5 3 0.75 1.5 1.1 150 - 65 to + 150
Unit V V V A A A A W
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 2 V, IC = 0.
STH13NB60FI Datasheet
