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STH140N6F7-6 - N-CHANNEL POWER MOSFET

Download the STH140N6F7-6 datasheet PDF. This datasheet also covers the STH140N6F7-2 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STH140N6F7-2 STH140N6F7-6 VDS 60 V RDS(on) max. 0.0032 Ω ID 80 A PTOT 158 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH140N6F7-2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STH140N6F7-2 N-CHANNEL POWER MOSFET
STH140N8F7-2 N-CHANNEL POWER MOSFET
STH145N8F7-2AG N-CHANNEL POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.0028 Ω typ., 80 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code STH140N6F7-2 STH140N6F7-6 VDS 60 V RDS(on) max. 0.0032 Ω ID 80 A PTOT 158 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.