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STH170N8F7-2 - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

+3$.

Table 1.

Features

  • Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness Figure 1. Internal schematic diagram ' 7$% .
  •  .

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Datasheet Details

Part number STH170N8F7-2
Manufacturer STMicroelectronics
File Size 388.86 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STH170N8F7-2 Datasheet
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Full PDF Text Transcription

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STH170N8F7-2 N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package Datasheet — production data TAB 2 3 1 H2PAK-2 Features Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1. Internal schematic diagram ' 7$% *  Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6  +3$. Order code STH170N8F7-2 Table 1.
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