STH170N8F7-2 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH170N8F7-2 Table 1. Device summary Marking Package 170N8F7 H2PAK-2 Packaging Tape and reel February 2015 This is information on a product in full production.
STH170N8F7-2 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
