Datasheet Details
| Part number | STH170N8F7-2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 388.86 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 STH170N8F7-2 Datasheet
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General Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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Table 1.
Key Features
- Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W.
- Among the lowest RDS(on) on the market.
- Excellent figure of merit (FoM).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness Figure 1. Internal schematic diagram ' 7$% .
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