STH320N4F6-6
Features
STH320N4F6-2, STH320N4F6-6
N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STrip FET™ VI Deep GATE™ Power MOSFET
- production data
Order codes STH320N4F6-2 STH320N4F6-6
VDS RDS(on) max
40 V
1.3 mΩ
1. Current limited by package.
- Standard threshold drive
- 100% avalanche tested
ID(1) 200 A
Applications
- Automotive switching applications
2 3
H2PAK-2
H2PAK-6
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STrip FET™ Deep GATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
Table 1. Device summary Order codes
STH320N4F6-2 STH320N4F6-6
Marking 320N4F6
S(2, 3)
H2PAK-2
Package H2PAK-2 H2PAK-6
S(2, 3, 4, 5, 6, 7)
H2PAK-6
SC06140_H2PAK-2-6
Packaging Tape and reel
February...
