STH320N4F6-6 Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Table.
STH320N4F6-6 Key Features
- production data
- Standard threshold drive
- 100% avalanche tested