Datasheet4U Logo Datasheet4U.com

STH320N4F6-6 - N-channel Power MOSFET

Download the STH320N4F6-6 datasheet PDF. This datasheet also covers the STH320N4F6-2 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ. , 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET Datasheet.
  • production data Order codes STH320N4F6-2 STH320N4F6-6 VDS RDS(on) max 40 V 1.3 mΩ 1. Current limited by package.
  • Standard threshold drive.
  • 100% avalanche tested ID(1) 200 A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH320N4F6-2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STH1061 NPN Plastic Power Transistor SEMTECH ELECTRONICS
STH10NA50 N-CHANNEL Power MOS MOSFET ST Microelectronics
STH10NA50FI N-CHANNEL Power MOS MOSFET ST Microelectronics
STH10NC60 N-CHANNEL Power MOS MOSFET ST Microelectronics
STH10NC60FI N-CHANNEL Power MOS MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STH320N4F6-2 N-channel Power MOSFET
STH300NH02L-6 Automotive-grade N-channel Power MOSFET
STH30N65DM6-7AG Automotive-grade N-channel Power MOSFET
STH310N10F7-2 N-CHANNEL Power MOSFET
STH310N10F7-6 N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET Datasheet — production data Order codes STH320N4F6-2 STH320N4F6-6 VDS RDS(on) max 40 V 1.3 mΩ 1. Current limited by package. ■ Standard threshold drive ■ 100% avalanche tested ID(1) 200 A Applications ■ Automotive switching applications TAB TAB 2 3 1 H2PAK-2 1 H2PAK-6 7 Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Table 1.