STH80N10F7-2 - N-CHANNEL POWER MOSFET

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STMicroelectronics

Part number	STH80N10F7-2
Manufacturer	STMicroelectronics
File Size	695.79 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STH80N10F7-2 Datasheet
Additional preview pages of the STH80N10F7-2 datasheet.

These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W.
Extremely low gate charge.
Ultra low on-resistance.
Low gate input resistance Figure 1. Internal schematic diagram '7$% '7$%.
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Published: Jun 8, 2016 |