STMicroelectronics STH8NA80FI
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.| Part No. | STH8NA80FI |
|---|---|
| Datasheet | STH8NA80FI Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
23 1 TO-247 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVEABSOLUTE MAXIMUM RATINGS
Symb ol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS G ate-source Volt age ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM(●) Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor VISO I nsulation W ithstand Voltage (DC) Ts tg Storage T emperature Tj Max. O perating Junct ion T emperature (●) Pulse width limited by safe operating area October 1998 V alu e STW 8NA80 ST H8NA80FI 800 800 ± 30 7.2 4.5 4.5 2.8 28.8 28.8 175 70 1.4 0.56 4000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/6 STW8NA80 STH8NA80FI THERMAL DATA Rthj-case R th j -a mb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose T O - 247 0.71 ISOWATT 218 1.
