STH9NA80FI Overview
50 500 ± 100 Unit V µA µA nA ON (∗) Symbo l VGS(th) RDS(on) ID(o n) Pa ram et e r Test Conditions Gate Threshold Voltage VDS = VGS ID = 250 µA Static Drain-source On VGS = 10V ID = 4.5 A Resistance On Stat e Drain Current VDS > ID(o n) x RDS(on )max VGS = 10 V Min. 3.75 Unit V 0.85 1 Ω 9.1 A DYNAMIC Symbo l gfs (∗) Ciss Coss Crss Pa ram et e r Forward Transconductance Input Capacitance Output Capacitance Reverse...
