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STHI07N50FI Datasheet High Injection N-channel Enhancement Mode Power Mos Transistors

Manufacturer: STMicroelectronics

Overview: STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY OATA TYPE STHI07N50 STHI07N50FI Voss 500 V 500 V 10 7A 7A • HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and relays. TO-220 ISOWATT220.

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