STHI07N50FI
STHI07N50FI is HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS manufactured by STMicroelectronics.
- Part of the STHI07N50 comparator family.
- Part of the STHI07N50 comparator family.
STHI07N50 STHI07N50FI
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)
PRELIMINARY OATA
TYPE
STHI07N50 STHI07N50FI
Voss
500 V 500 V
7A 7A
- HIGH INPUT IMPEDANCE
- LOW ON-VOLTAGE
- HIGH CURRENT CAPABILITY
APPLICATIONS:
- AUTOMOTIVE IGNITION
- DRIVERS FOR SOLENOIDS AND RELAYS
- channel High Injection POWER MOS transistors (l GBT) which Features a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and relays.
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
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