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STI11NM60ND

Manufacturer: STMicroelectronics

STI11NM60ND datasheet by STMicroelectronics.

STI11NM60ND datasheet preview

STI11NM60ND Datasheet Details

Part number STI11NM60ND
Datasheet STI11NM60ND_STMicroelectronics.pdf
File Size 602.85 KB
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
STI11NM60ND page 2 STI11NM60ND page 3

STI11NM60ND Overview

O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device.

STI11NM60ND Key Features

  • Fast-recovery body diode
  • Low gate charge and input capacitance
  • Low on-resistance RDS(on)
  • 100% avalanche tested
  • High dv/dt ruggedness

STI11NM60ND from other manufacturers

View STI11NM60ND datasheet index

Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo STI11NM60ND N-Channel MOSFET INCHANGE
STMicroelectronics logo - Manufacturer

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