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STI11NM60ND - N-Channel Power MOSFET

General Description

MDmesh II technology.

Key Features

  • TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB).
  • Fast-recovery body diode.
  • Low gate charge and input capacitance.
  • Low on-resistance RDS(on).
  • 100% avalanche tested.
  • High dv/dt ruggedness te P.

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STI11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in an I²PAK package Features TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB) • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness te P Applications le • Switching applications so G(1) b Description - O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge ctopologies and ZVS phase-shift converters.