Datasheet Summary
N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in an I²PAK package
Features
Order code
VDS at TJ max.
RDS(on) max.
650 V
450 mΩ
10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB)
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance RDS(on)
- 100% avalanche tested
- High dv/dt ruggedness te P Applications le
- Switching applications so G(1) b Description
- O S(3)
This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen
MDmesh II technology. Utilizing a new strip-layout vertical structure, this device Features low on-resistance and superior switching...
