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STI12N65M5 - N-Channel Power MOSFET

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • Type STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 VDSS @ RDS(on) TJmax max ID PTOT 710 V 8.5 A 8.5 A(1) < 0.43 Ω 8.5 A 8.5 A 8.5 A 70 W 25 W 70 W 70 W 70 W 1. Limited only by maximum temperature allowed.
  • Worldwide best RDS(on).
  • area.
  • Higher VDSS rating and high dv/dt capability.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh™ V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features Type STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 VDSS @ RDS(on) TJmax max ID PTOT 710 V 8.5 A 8.5 A(1) < 0.43 Ω 8.5 A 8.5 A 8.5 A 70 W 25 W 70 W 70 W 70 W 1. Limited only by maximum temperature allowed. ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Applications Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.