Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
Features
- Type
STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5
VDSS @ RDS(on) TJmax max
ID
PTOT
710 V
8.5 A 8.5 A(1) < 0.43 Ω 8.5 A 8.5 A 8.5 A
70 W 25 W 70 W 70 W 70 W
1. Limited only by maximum temperature allowed.
- Worldwide best RDS(on).
- area.
- Higher VDSS rating and high dv/dt capability.
- Excellent switching performance.
- Easy to drive.
- 100% avalanche tested.
STI12N65M5 Datasheet
