STI13NM60N Datasheet | STMicroelectronics

STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages Features 3 12 TO-220FP 1 23 I2PAK TO-220 1 23 3 12 IPAK Order codes RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance ID 11 A D(2, TAB) Applications - Switching applications G(1) S(3) NG1D2TS3 Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the pany’s strip layout to yield one of the world’s lowest onresistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STF13NM60N STI13NM60N STP13NM60N STU13NM60N DS6112 - Rev...