Datasheet Details
| Part number | STI14NM50N |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 1.24 MB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STI14NM50N Datasheet
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General Description
These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
- 3 2 1 TO-220FP TAB TAB I2PAK 1 2 3 TO-220 3 2 1 Figure 1. Internal schematic diagram ' 7$% .
- 6 $0Y Order codes STF14NM50N STI14NM50N STP14NM50N VDS @ TJmax RDS(on) max ID 550 V 0.32 Ω 12 A.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- Low gate input resistance.