Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
Features
- Type
STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5
VDSS @ TJmax
RDS(on) max
710 V < 0.279 Ω.
- Worldwide best RDS(on).
- Higher VDSS rating.
- High dv/dt capability.
- Excellent switching performance.
- Easy to drive.
- 100% avalanche tested
ID 12 A
TAB
TAB
3 2 1
TO-220FP
123
I²PAK
3 2 1
TO-220
TAB
IPAK
3
2 1
3 2 1
TO-247
Figure 1. Internal schematic diagram.