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STI21N65M5 - N-CHANNEL MOSFET

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Table 1.

Overview

STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.

Key Features

  • Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 1. Limited only by maximum temperature allowed.
  • Worldwide best RDS(on).
  • area.
  • Higher VDSS rating.
  • High dv/dt capability.
  • Excellent switching performance.
  • 100% avalanche tested.