STI30N65M5 Description
' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is bined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
STI30N65M5 Key Features
- Worldwide best RDS(on)-area
- Higher VDSS rating
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
- High dv/dt capability