STI32N65M5 Overview
These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology bined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. STF32N65M5,STI32N65M5,STP32N65M5,STW32N65M5 Electrical ratings 1 Electrical ratings Table.
STI32N65M5 Key Features
- Obso S(3)
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
