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STI35N65M5 - N-channel Power MOSFET

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • Type STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5 VDSS @ TJMAX 710 V 710 V 710 V 710 V 710 V RDS(on) max. ID < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω 27 A 27 A(1) 27 A 27 A 27 A 1. Limited only by maximum temperature allowed.
  • Worldwide best RDS(on).
  • area.
  • Higher VDSS rating.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested.
  • High dv/dt capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Type STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5 VDSS @ TJMAX 710 V 710 V 710 V 710 V 710 V RDS(on) max. ID < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω 27 A 27 A(1) 27 A 27 A 27 A 1. Limited only by maximum temperature allowed ■ Worldwide best RDS(on)* area ■ Higher VDSS rating ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested ■ High dv/dt capability Applications 3 1 D²PAK 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1.