STI360N4F6
Description
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. $0Y.
Key Features
- Internal schematic diagram ' 7$%
- 6 Order codes STI360N4F6 STP360N4F6 VDS 40 V RDS(on) max. ID
- 8 mΩ 120 A
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Low gate charge
- High avalanche ruggedness
- Low gate drive power loss
