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STI360N4F6 - N-channel Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Table 1.

Features

  • TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% .
  •  6  Order codes STI360N4F6 STP360N4F6 VDS 40 V RDS(on) max. ID 1.8 mΩ 120 A.
  • Designed for automotive.

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Full PDF Text Transcription

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STI360N4F6, STP360N4F6 Automotive-grade N-channel 40 V, 1.46 mΩ typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages Datasheet - production data Features TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% *  6  Order codes STI360N4F6 STP360N4F6 VDS 40 V RDS(on) max. ID 1.8 mΩ 120 A • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
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