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STI45N10F7 - N-CHANNEL POWER MOSFET

General Description

These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max. (1) 100 V 0.018 Ω 1. @ VGS = 10 V.
  • Ultra low on-resistance.
  • 100% avalanche tested ID 45 A PTOT 60 W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages Datasheet - production data TAB 3 1 DPAK TAB TAB 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' Features Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested ID 45 A PTOT 60 W Applications • Switching applications Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 !-V Order codes STD45N10F7 STI45N10F7 STP45N10F7 Table 1.