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STI6N80K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order codes VDS RDS(on)max ID PTOT STB6N80K5 STD6N80K5 800 V STI6N80K5 1.6 Ω 4.5 A 85 W STP6N80K5 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram D(2, TAB).
  • Industry’s lowest RDS(on).
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected G(1) S(3) AM01476v1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in D²PAK, DPAK, I²PAK and TO-220 packages Datasheet - production data TAB 3 1 D2PAK TAB TAB 3 1 DPAK TAB Features Order codes VDS RDS(on)max ID PTOT STB6N80K5 STD6N80K5 800 V STI6N80K5 1.6 Ω 4.5 A 85 W STP6N80K5 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram D(2, TAB) • Industry’s lowest RDS(on) • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected G(1) S(3) AM01476v1 Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.