STI7105 Datasheet | STMicroelectronics

New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A TMBS ® TO-220AB ITO-220AB Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 - Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package) - Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package) - ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS TO-263AB K K TO-262AA 2 1 1 VB40100C PIN 1 PIN 2 K HEATSINK For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB & TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for mercial grade Polarity: As marked Mounting Torque: 10 in-lbs maximum VI40100C PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A Tj max. 2 x 20 A 100 V 250 A 0.61 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG VTS40100CT VF40100C VB40100C 100 40 20 250...