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STK32N4LLH5 - Power MOSFET

General Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Key Features

  • Type STK32N4LLH5.
  • VDSS RDS(on) max RDS(on).
  • Qg 40 V < 0.0025 Ω 106.4nC.
  • mΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on).
  • Qg industry benchmark High avalanche ruggedness Fully encapsulated die 100% Matte tin finish (in compliance with the 2002/95/EC european directive) PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK®.

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www.DataSheet4U.com STK32N4LLH5 N-channel 40 V, 0.0017 Ω , 32 A, PolarPAK® STripFET™ V Power MOSFET Preliminary Data Features Type STK32N4LLH5 ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) max RDS(on)*Qg 40 V < 0.0025 Ω 106.4nC*mΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark High avalanche ruggedness Fully encapsulated die 100% Matte tin finish (in compliance with the 2002/95/EC european directive) PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK® Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.